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M. Fanfoni

Identifiers

  • name variant M. Fanfoni 0.60 · backfill

Papers (12)

  1. Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing cond-mat.mes-hall · 2019 · author #2
  2. Abrupt changes in the graphene on Ge(001) system at the onset of surface melting cond-mat.mtrl-sci · 2019 · author #7
  3. Formation of extended thermal etch pits on annealed Ge wafers cond-mat.mtrl-sci · 2018 · author #2
  4. Early stage of CVD graphene synthesis on Ge(001) substrate cond-mat.mtrl-sci · 2018 · author #3
  5. Statistical approach based on 1D Voronoi tessellation as a tool for studying the randomness of fractional digits of some irrational numbers math.GM · 2015 · author #1
  6. Beyond the constraints underlying Kolmogorov-Johnson-Mehl-Avrami theory related to the growth laws cond-mat.mtrl-sci · 2012 · author #2
  7. Hug-like island growth of Ge on strained vicinal Si(111) surfaces cond-mat.mes-hall · 2011 · author #4
  8. Ripple-to-dome transition: the growth evolution of Ge on vicinal Si(1 1 10) surface cond-mat.mes-hall · 2010 · author #3
  9. Experimental corroboration of the Mulheran-Blackman explanation of the scale invariance in thin film growth: the case of InAs quantum dots on GaAs(001) cond-mat.mtrl-sci · 2006 · author #1
  10. How kinetics drives the two- to three-dimensional transition in semiconductor strained heterostructures: the case of InAs/GaAs(001) cond-mat.mtrl-sci · 2005 · author #4
  11. Eliminating overgrowth effects in Poisson spatial process through the correlation among actual nuclei cond-mat.mtrl-sci · 2003 · author #2
  12. Beyond the Kolmogorov Johnson Mehl Avrami kinetics: inclusion of the spatial correlation cond-mat.stat-mech · 2003 · author #1

Mentions

  • 1506.03700 #1 · backfill · confidence 0.70 M. Fanfoni
  • 1201.4246 #2 · backfill · confidence 0.70 M. Fanfoni
  • 1108.5417 #4 · backfill · confidence 0.70 M. Fanfoni
  • 1005.5231 #3 · backfill · confidence 0.70 M. Fanfoni

Frequent Coauthors