Albert Chin (5) ((1) A.V. Rzhanov Institute of Semiconductor Physics of SB RAS

Identifiers

• name variant Albert Chin (5) ((1) A.V. Rzhanov Institute of Semiconductor Physics of SB RAS 0.60 · backfill

Papers (1)

1. Origin of defects responsible for charge transport in resistive random access memory based on hafnia cond-mat.mes-hall · 2013 · author #10

Mentions

• 1309.0071 #10 · backfill · confidence 0.70 Albert Chin (5) ((1) A.V. Rzhanov Institute of Semiconductor Physics of SB RAS

Frequent Coauthors

• (2) Boreskov Institute of Catalysis of SB RAS 1 shared papers
• (3) Ioffe Physicotechnical Institute 1 shared papers
• (4) Dept. of Mechatronic Technology 1 shared papers
• (5) Department of Electronics Engineering 1 shared papers
• A. A. Saraev (2) 1 shared papers
• C. H. Cheng (4) 1 shared papers
• Damir R. Islamov (1) 1 shared papers
• E. V. Ivanova (3) 1 shared papers
• M. V. Zamoryanskaya (3) 1 shared papers
• National Chiao-Tung University 1 shared papers
• National Taiwan Normal University 1 shared papers
• Novosibirsk 1 shared papers
• Russia 1 shared papers
• Russian Academy of Sciences 1 shared papers
• St. Petersburg 1 shared papers
• Taiwan ROC 1 shared papers
• Taiwan ROC.) 1 shared papers
• T. V. Perevalov (1) 1 shared papers
• V. A. Gritsenkov 1 shared papers
• V. Sh. Aliev (1) 1 shared papers