(3) Ioffe Physicotechnical Institute
Identifiers
- name variant (3) Ioffe Physicotechnical Institute 0.60 · backfill
Papers (1)
- Origin of defects responsible for charge transport in resistive random access memory based on hafnia cond-mat.mes-hall · 2013 · author #16
Mentions
- 1309.0071 #16 · backfill · confidence 0.70 (3) Ioffe Physicotechnical Institute
Frequent Coauthors
- (2) Boreskov Institute of Catalysis of SB RAS 1 shared papers
- (4) Dept. of Mechatronic Technology 1 shared papers
- (5) Department of Electronics Engineering 1 shared papers
- A. A. Saraev (2) 1 shared papers
- Albert Chin (5) ((1) A.V. Rzhanov Institute of Semiconductor Physics of SB RAS 1 shared papers
- C. H. Cheng (4) 1 shared papers
- Damir R. Islamov (1) 1 shared papers
- E. V. Ivanova (3) 1 shared papers
- M. V. Zamoryanskaya (3) 1 shared papers
- National Chiao-Tung University 1 shared papers
- National Taiwan Normal University 1 shared papers
- Novosibirsk 1 shared papers
- Russia 1 shared papers
- Russian Academy of Sciences 1 shared papers
- St. Petersburg 1 shared papers
- Taiwan ROC 1 shared papers
- Taiwan ROC.) 1 shared papers
- T. V. Perevalov (1) 1 shared papers
- V. A. Gritsenkov 1 shared papers
- V. Sh. Aliev (1) 1 shared papers