{"paper":{"title":"The Sub-band Structure of Atomically Sharp Dopant Profiles in Silicon","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mtrl-sci"],"primary_cat":"cond-mat.mes-hall","authors_text":"Chin-Yi Chen, Craig M. Polley, Federico Mazzola, Jill A. Miwa, Justin W. Wells, Phil D. C. King, Philip Hofmann, Rajib Rahman, Thiagarajan Balasubramanian, Xie-Gang Zhu","submitted_at":"2019-04-24T17:06:35Z","abstract_excerpt":"The downscaling of silicon-based structures and proto-devices has now reached the single atom scale, representing an important milestone for the development of a silicon-based quantum computer. One especially notable platform for atomic scale device fabrication is the so-called SiP delta-layer, consisting of an ultra dense and sharp layer of dopants within a semiconductor host. Whilst several alternatives exist, phosphorus dopants in silicon have drawn the most interest, and it is on this platform that many quantum proto-devices have been successfully demonstrated. Motivated by this, both calc"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1904.10929","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}