{"paper":{"title":"Material developments and domain wall based nanosecond-scale switching process in perpendicularly magnetized STT-MRAM cells","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mes-hall"],"primary_cat":"cond-mat.mtrl-sci","authors_text":"G. Kar, Joo-Von Kim, J. Swerts, S. Couet, S. Mertens, S. Rao, Thibaut Devolder, V. Nikitin, W. Kim","submitted_at":"2017-03-09T09:42:13Z","abstract_excerpt":"We investigate the Gilbert damping and the magnetization switching of perpendicularly magnetized FeCoB-based free layers embedded in tunnel junctions adequate for spin-torque operated memories. We study the influence of the boron content in MgO / FeCoB /Ta systems alloys on their Gilbert damping after crystallization annealing. Increasing the boron content from 20 to 30\\% increases the crystallization temperature, thereby postponing the onset of elemental diffusion within the free layer. This reduction of the interdiffusion of the Ta atoms helps maintaining the Gilbert damping at a low level o"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1703.03198","kind":"arxiv","version":3},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}