{"paper":{"title":"Spin Hall Effect in Doped Semiconductor Structures","license":"","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"S. Das Sarma, Wang-Kong Tse","submitted_at":"2005-07-06T19:10:43Z","abstract_excerpt":"In this Letter we present a microscopic theory of the extrinsic spin Hall effect based on the diagrammatic perturbation theory. Side-jump (SJ) and skew-scattering (SS) contributions are explicitly taken into account to calculate the spin Hall conductivity, and we show their effects scale as $\\sigma_{xy}^{SJ}/\\sigma_{xy}^{SS} \\sim (\\hbar/\\tau)/\\epsilon_F$, with $\\tau$ being the transport relaxation time. Motivated by recent experimental work we apply our theory to n- and p-doped 3D and 2D GaAs structures, obtaining $\\sigma_s/\\sigma_c \\sim 10^{-3}-10^{-4}$ where $\\sigma_{s(c)}$ is the spin Hall "},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"cond-mat/0507149","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}