{"paper":{"title":"Temperature and Electric Field Induced Metal-Insulator Transition in Atomic Layer Deposited Vanadium Dioxide Thin Films","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mes-hall"],"primary_cat":"cond-mat.str-el","authors_text":"Brian P. Downey, Charles R. Eddy, David J. Meyer, Fritz J. Kub, Jr., Marko J. Tadjer, Virginia D. Wheeler, Zachary R. Robinson","submitted_at":"2016-02-19T22:48:41Z","abstract_excerpt":"Amorphous vanadium dioxide (VO$_{2}$) films deposited by atomic layer deposition (ALD) were crystallized with an ex situ anneal at 660-670 ${\\deg}$C for 1-2 hours under a low oxygen pressure (10$^{-4}$ to 10$^{-5}$ Torr). Under these conditions the crystalline VO$_{2}$ phase was maintained, while formation of the V$_{2}$O$_{5}$ phase was suppressed. Electrical transition from the insulator to the metallic phase was observed in the 37-60 ${\\deg}$C range, with a R$_{ON}$/R$_{OFF}$ ratio of up to about 750 and critical transition temperature of 7-10 ${\\deg}$C. Electric field applied across two-te"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1602.06340","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}