{"paper":{"title":"Defect-induced Fermi level pinning and suppression of ambipolar behaviour in graphene","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"Hiroshi Mizuta, Shuojin Hang, Zakaria Moktadir","submitted_at":"2014-10-16T12:48:09Z","abstract_excerpt":"We report on systematic study of electronic transport in low-biased, disordered graphene nanowires. We reveal the emergence of unipolar transport as the defect concentration increases beyond 0.3\\% where an almost insulating behaviour is observed on n-type channels whilst a metallic behaviour is observed in p-type channels. The conductance shows a plateau that extends through the entire side above the Dirac point (n-type) and the conductivity coincides with the minimum conductivity at the Dirac point. The minimum conductivity decreases with increasing defect concentration pointing out towards t"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1410.4400","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}