{"paper":{"title":"Fabrication and characterization of semiconducting half Heusler YPtSb thin films","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Anja Dion, Claudia Felser, Enrique V. Vilanova, Frederick Casper, Gerhard H. Fecher, Gerhard Jakob, Juan Qin, Rong Shan","submitted_at":"2012-09-27T17:18:13Z","abstract_excerpt":"The semiconducting half Heusler compound YPtSb was predicted theoretically to be capable of changing into topological insulator under proper strain. In this work, p type semiconducting half-Heusler YPtSb thin films were prepared by magnetron co-sputtering method from a specially designed target for the first time. Textured structure with (111) plane paralleling with (001) of MgO substrate was observed when YPtSb thin films were grown on MgO (100) substrate at 600{\\deg}C.Electrical measurements show that the resistivity of YPtSb films decreases with increasing temperature, indicating a semicond"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1209.6288","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}