{"paper":{"title":"Influence of vacuum annealing on interface properties of SiC (0001) MOS structures","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Koji Ito, Takuma Kobayashi, Tsunenobu Kimoto","submitted_at":"2019-04-10T05:10:41Z","abstract_excerpt":"We investigated the influence of vacuum annealing on interface properties of silicon carbide (SiC) metal-oxide-semiconductor (MOS) structures. For as-oxidized and nitric oxide (NO)-annealed samples, the interface state density ($D_{\\rm it}$) near the conduction band edge ($E_{\\rm C}$) of SiC did not increase by subsequent vacuum annealing. For phosphoryl chloride (POCl$_3$)-annealed samples, in contrast, $D_{\\rm it}$ at $E_{\\rm C}-0.2$ eV increased from $1.3\\times10^{10}$ to $2.2\\times10^{12}$ cm$^{-2}$eV$^{-1}$ by the vacuum annealing, and the channel mobility of MOS field effect transistors "},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1904.05006","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}