{"paper":{"title":"Magnetoresistive effect in graphene nanoribbon due to magnetic field induced band gap modulation","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"Gengchiau Liang, M. B. A. Jalil, S. Bala Kumar, S. G. Tan","submitted_at":"2010-06-11T08:51:41Z","abstract_excerpt":"The electronic properties of armchair graphene nanoribbons (AGNRs) can be significantly modified from semiconducting to metallic states, by applying a uniform perpendicular magnetic field (B-field). Here, we theoretically study the bandgap modulation induced by a perpendicular B-field. The applied B-field causes the lowest conduction subband and the top-most valence subband to move closer to one another to form the n=0 Landau level. We exploit this effect to realize a device relevant MR modulation. Unlike in conventional spin-valves, this intrinsic MR effect is realized without the use of any "},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1006.2235","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}