{"paper":{"title":"Radio-frequency reflectometry in silicon carbide large-area transistors","license":"http://creativecommons.org/licenses/by/4.0/","headline":"Large-area silicon carbide transistors show a gate-dependent RF reflectometry response that degrades and vanishes at low temperatures due to carrier freeze-out in the drift region.","cross_cats":["physics.app-ph"],"primary_cat":"cond-mat.mes-hall","authors_text":"Alessandro Rossi, Alexander Zotov, Conor McGeough, Megan Powell","submitted_at":"2026-05-14T20:18:31Z","abstract_excerpt":"Radio-frequency (RF) reflectometry is widely used for high-bandwidth readout of semiconductor quantum devices at cryogenic temperatures, but its application has mainly been limited to nanoscale structures with relatively small capacitances. Here, we investigate RF readout in a different regime by applying gate-based reflectometry to a large-area silicon carbide transistor with parasitic capacitances orders of magnitude larger than those of typical quantum devices, conditions normally expected to hinder RF readout. We observe a gate-dependent RF response which degrades and eventually vanishes a"},"claims":{"count":4,"items":[{"kind":"strongest_claim","text":"We observe a gate-dependent RF response which degrades and eventually vanishes as temperature is lowered, although MOSFET operation in DC transport is maintained down to deep cryogenic temperatures. We attribute this behaviour to impedance changes introduced by carrier freeze-out in the transistor drift region, and propose a modified circuit configuration designed to restore sensitivity under these conditions.","source":"verdict.strongest_claim","status":"machine_extracted","claim_id":"C1","attestation":"unclaimed"},{"kind":"weakest_assumption","text":"The assumption that the observed degradation of the RF response is caused specifically by impedance changes from carrier freeze-out in the drift region rather than other temperature-dependent effects such as interface traps or contact resistance; this attribution is stated in the abstract but would require detailed impedance modeling or temperature-dependent measurements to confirm.","source":"verdict.weakest_assumption","status":"machine_extracted","claim_id":"C2","attestation":"unclaimed"},{"kind":"one_line_summary","text":"Gate-based RF reflectometry on large-area SiC transistors shows gate-dependent response that degrades at cryogenic temperatures due to carrier freeze-out in the drift region, with a proposed modified circuit to restore sensitivity.","source":"verdict.one_line_summary","status":"machine_extracted","claim_id":"C3","attestation":"unclaimed"},{"kind":"headline","text":"Large-area silicon carbide transistors show a gate-dependent RF reflectometry response that degrades and vanishes at low temperatures due to carrier freeze-out in the drift region.","source":"verdict.pith_extraction.headline","status":"machine_extracted","claim_id":"C4","attestation":"unclaimed"}],"snapshot_sha256":"6ec907f205efedeeb81dd09b6b82878ca5cbd8a9732ba84181a9ff2de0ca805d"},"source":{"id":"2605.15389","kind":"arxiv","version":1},"verdict":{"id":"4b29842e-5c8f-4d44-b99e-7c3dca708fd5","model_set":{"reader":"grok-4.3"},"created_at":"2026-05-19T15:16:31.080651Z","strongest_claim":"We observe a gate-dependent RF response which degrades and eventually vanishes as temperature is lowered, although MOSFET operation in DC transport is maintained down to deep cryogenic temperatures. We attribute this behaviour to impedance changes introduced by carrier freeze-out in the transistor drift region, and propose a modified circuit configuration designed to restore sensitivity under these conditions.","one_line_summary":"Gate-based RF reflectometry on large-area SiC transistors shows gate-dependent response that degrades at cryogenic temperatures due to carrier freeze-out in the drift region, with a proposed modified circuit to restore sensitivity.","pipeline_version":"pith-pipeline@v0.9.0","weakest_assumption":"The assumption that the observed degradation of the RF response is caused specifically by impedance changes from carrier freeze-out in the drift region rather than other temperature-dependent effects such as interface traps or contact resistance; this attribution is stated in the abstract but would require detailed impedance modeling or temperature-dependent measurements to confirm.","pith_extraction_headline":"Large-area silicon carbide transistors show a gate-dependent RF reflectometry response that degrades and vanishes at low temperatures due to carrier freeze-out in the drift region."},"integrity":{"clean":true,"summary":{"advisory":0,"critical":0,"by_detector":{},"informational":0},"endpoint":"/pith/2605.15389/integrity.json","findings":[],"available":true,"detectors_run":[{"name":"citation_quote_validity","ran_at":"2026-05-19T15:50:58.007874Z","status":"completed","version":"0.1.0","findings_count":0},{"name":"doi_title_agreement","ran_at":"2026-05-19T15:31:17.864845Z","status":"completed","version":"1.0.0","findings_count":0},{"name":"doi_compliance","ran_at":"2026-05-19T15:30:44.443343Z","status":"completed","version":"1.0.0","findings_count":0},{"name":"claim_evidence","ran_at":"2026-05-19T14:21:54.171389Z","status":"completed","version":"1.0.0","findings_count":0},{"name":"ai_meta_artifact","ran_at":"2026-05-19T13:33:22.723943Z","status":"skipped","version":"1.0.0","findings_count":0}],"snapshot_sha256":"87416ac9682db3b4c42e9080fecc6d5d37f42a1b69a71c2a4e61f1bc2b7898d7"},"references":{"count":39,"sample":[{"doi":"","year":null,"title":"Our aluminium bond wires have a length ofl≈5 mm and diameter 50µm (r= 25µm), henceL bw ≈5 nH","work_id":"780ea282-b8eb-4ea8-900a-325fd54a3980","ref_index":1,"cited_arxiv_id":"","is_internal_anchor":false},{"doi":"","year":null,"title":"Substitutingl= 5 mm andr= 25µm givesR bw,dc ≈0.07 Ω","work_id":"c88ccd70-39ab-4258-982c-44af79cc9637","ref_index":2,"cited_arxiv_id":"","is_internal_anchor":false},{"doi":"","year":null,"title":"Using a typical PCB trace in- ductance of order 1 nH/mm and measured trace lengths of approximately 10–15 mm yields inductance values re- ported in Table I","work_id":"3f657efe-89fe-4063-b5a0-1f7afc4857e0","ref_index":3,"cited_arxiv_id":"","is_internal_anchor":false},{"doi":"","year":null,"title":"Substitution givesC p ≈4 pF","work_id":"62149f8d-c873-4586-b077-4380cf758aaa","ref_index":4,"cited_arxiv_id":"","is_internal_anchor":false},{"doi":"","year":null,"title":"The values are taken atV DS = 0","work_id":"131b9a3c-1c2a-4e70-84cb-b0f959f5bd04","ref_index":5,"cited_arxiv_id":"","is_internal_anchor":false}],"resolved_work":39,"snapshot_sha256":"66f707c1f974db9ad2e423424a7aa44f887482d5df14590576cba3026fdf5d59","internal_anchors":0},"formal_canon":{"evidence_count":2,"snapshot_sha256":"81945dae6096c6609b875f18620341f26cab24437cab5211657e1505e1d8f3a2"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}