{"paper":{"title":"Electronic correlations in FeGa$_3$ and the effect of hole doping on its magnetic properties","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.str-el","authors_text":"A. Puri, C. Brown, G. Kotliar, J. M. Tomczak, M. B. Gamza, M. C. Aronson","submitted_at":"2014-05-09T23:23:46Z","abstract_excerpt":"We investigate signatures of electronic correlations in the narrow-gap semiconductor FeGa$_3$ by means of electrical resistivity and thermodynamic measurements performed on single crystals of FeGa$_3$, Fe$_{1-x}$Mn$_x$Ga$_3$ and FeGa$_{3-y}$Zn$_y$, complemented by a study of the 4$d$ analog material RuGa$_3$. We find that the inclusion of sizable amounts of Mn and Zn dopants into FeGa$_3$ does not induce an insulator-to-metal transition. Our study indicates that both substitution of Zn onto the Ga site and replacement of Fe by Mn introduces states into the semiconducting gap that remain locali"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1405.2369","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}