{"paper":{"title":"Metallic state in La-doped YBa$_2$Cu$_3$O$_y$ thin films with $n$-type charge carriers","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mtrl-sci","cond-mat.str-el"],"primary_cat":"cond-mat.supr-con","authors_text":"A. Annadi, Ariando, H. Mao, M. Motapothula, S. Dhar, S. W. Zeng, T. Venkatesan, W. Chen, W. M. L\\\"u, X. Wang, Y. L. Zhao, Z. Huang, Z. Q. Liu","submitted_at":"2012-07-25T08:08:25Z","abstract_excerpt":"We report hole and electron doping in La-doped YBa$_2$Cu$_3$O$_y$(YBCO) thin films synthesized by pulsed laser deposition technique and subsequent \\emph{in-situ} postannealing in oxygen ambient and vaccum. The $n$-type samples show a metallic behavior below the Mott limit and a high carrier density of $\\sim2.8$ $\\times$ 10$^{21}$ cm$^{-3}$ at room temperature (\\emph{T}) at the optimally reduced condition. The in-plane resistivity ($\\rho$$_{ab}$) of the $n$-type samples exhibits a quadratic \\emph{T} dependence in the moderate-\\emph{T} range and shows an anomaly at a relatively higher \\emph{T} p"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1207.5914","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}