{"paper":{"title":"Growth of narrow-neck, epitaxial and nearly spherical Ge nanoislands on air-exposed Si(111)-(7$\\times$7) surfaces","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"A. Roy, B. N. Dev, J. Ghatak, K. Bhattacharjee, P. V. Satyam, S. Mathew, S. Roy","submitted_at":"2011-10-19T11:24:45Z","abstract_excerpt":"Growth of narrow-neck, epitaxial as well as non-epitaxial and nearly spherical Ge islands on air-exposed Si(111)-(7\\times7) surfaces has been investigated by in-situ scanning tunnelling microscopy (STM) and ex-situ high resolution cross-sectional transmission electron microscopy (HRXTEM). A thin oxide is formed on Si(111)-(7\\times7) surfaces via air exposure. Ge islands are grown on this oxide. STM measurements reveal the growth of very small (~2 nm diameter) Ge islands with a high number density of about 1.8\\times10^12 cm-2. The island size has been found to depend on the amount of deposited "},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1110.4242","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}