{"paper":{"title":"Poor electronic screening in lightly doped Mott insulators observed with scanning tunneling microscopy","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.str-el","authors_text":"Alberto de la Torre, Felix Baumberger, Irene Battisti, Koen M. Bastiaans, Milan P. Allan, Robin S. Perry, Vitaliy Fedoseev","submitted_at":"2017-03-13T17:20:16Z","abstract_excerpt":"The effective Mott gap measured by scanning tunneling microscopy (STM) in the lightly doped Mott insulator $(\\rm{Sr}_{1 -x}\\rm{La}_x)_2\\rm{IrO}_4$ differs greatly from values reported by photoemission and optical experiments. Here, we show that this is a consequence of the poor electronic screening of the tip-induced electric field in this material. Such effects are well known from STM experiments on semiconductors, and go under the name of tip-induced band bending (TIBB). We show that this phenomenon also exists in the lightly doped Mott insulator $(\\rm{Sr}_{1 -x}\\rm{La}_x)_2\\rm{IrO}_4$ and t"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1703.04492","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}