{"paper":{"title":"Elimination of basal-plane stacking faults in semipolar/nonpolar GaN and light emitting diodes heteroepitaxially grown on sapphire substrates","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Cheng Zhang, Jie Song, Joowon Choi, Jung Han, Yujun Xie, Zhen Deng","submitted_at":"2018-10-16T02:41:31Z","abstract_excerpt":"High quality semipolar and nonpolar GaN is crucial in achieving high-performance GaN-based optoelectronic devices, yet it has been very challenging to achieve large-area wafers that are free of basal-plane stacking faults (BSFs). In this work, we report an approach to prepare large-area, stacking-fault-free (SF-free) semipolar GaN on (4-inch) sapphire substrates. A root cause of the formation of BSFs is the emergence of N-polar (000-1) facets during semipolar and non-polar heteroepitaxy. Invoking the concept of kinetic Wulff plot, we succeeded in suppressing the occurrence of N-polar GaN (000-"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1810.06794","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}