{"paper":{"title":"Anisotropy of zero-resistance states in InN films under an in-plane magnetic filed","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.supr-con","authors_text":"Bo Shen, Ivan Knez, Rui-Rui Du, Xiaowei He, Xingqiang Wang, Yanhua Dai","submitted_at":"2011-05-25T20:53:15Z","abstract_excerpt":"We report low temperature current-voltage measurements on n-type InN films grown by molecular beam epitaxy. The zero-resistance state with a large critical current around 1 mA has been observed at 0.3 K. Under in-plane field configuration, the zero-resistance state shows a large anisotropy in critical current for B parallel and perpendicular to applied current. The ratio of critical current between B parallel and perpendicular to the applied current can be up to 2.5, when B = 0.15T. The anisotropy is explained by the vortex flow in the context of type II superconductivity. We have thus establi"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1105.5150","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}