{"paper":{"title":"Transient Phenomena in Sub-Band Gap Impact Ionization in Si NIPIN Diode","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"physics.app-ph","authors_text":"Bhaskar Das, J. Schulze, Udayan Ganguly","submitted_at":"2018-05-18T05:29:54Z","abstract_excerpt":"Sub-band-gap (SBG) impact ionization (II) enables steep subthreshold slope that enables devices to overcome the thermal limit of 60mV/decade. This phenomenon at low voltage enables various applications in logic, memory and neuromorphic engineering. Recently, we have demonstrated sub-0.2V II in NIPIN diode experimentally primarily based on the steady-state analysis. In this paper, we present the detailed experimental transient behavior of SBG-II in NIPIN. The SBG-II generated holes are stored in the p-well. First, we extract the leakage mechanism from the p-well to show two mechanisms (i) recom"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1805.07053","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}