{"paper":{"title":"The neutral silicon-vacancy center in diamond: spin polarization and lifetimes","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mes-hall","cond-mat.mtrl-sci"],"primary_cat":"quant-ph","authors_text":"A. M. Edmonds, B. G. Breeze, B. L. Green, D. J. Twitchen, M. E. Newton, M. W. Doherty, S. D. Williams, S. Mottishaw, U. F. S. D'Haenens-Johansson","submitted_at":"2017-05-29T14:12:22Z","abstract_excerpt":"We demonstrate optical spin polarization of the neutrally-charged silicon-vacancy defect in diamond ($\\mathrm{SiV^{0}}$), an $S=1$ defect which emits with a zero-phonon line at 946 nm. The spin polarization is found to be most efficient under resonant excitation, but non-zero at below-resonant energies. We measure an ensemble spin coherence time $T_2>100~\\mathrm{\\mu s}$ at low-temperature, and a spin relaxation limit of $T_1>25~\\mathrm{s}$. Optical spin state initialization around 946 nm allows independent initialization of $\\mathrm{SiV^{0}}$ and $\\mathrm{NV^{-}}$ within the same optically-add"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1705.10205","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}