{"paper":{"title":"A Surface-Potential Based Compact Model for GaN HEMTs Directly Incorporating Polarization Charges","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"Debdeep Jena, Huili (Grace) Xing, Raj K. Jana","submitted_at":"2013-02-06T01:48:52Z","abstract_excerpt":"A method to incorporate polarization charges at heterojunctions in compact models for transistors is presented. By including the polarization sheet charge as a Dirac delta function, the Poisson equation is solved to yield a closed equation for the surface potential. A compact model for transistors based on the surface potential incorporating polarization charges describes the on-state as well as the off-state regimes of device operation. The new method of incorporating polarization charges in compact models helps make a direct connection to the material properties of the transistor. The curren"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1302.1243","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}