{"paper":{"title":"Local geometry around B atoms in B/Si(111) from polarized x-ray absorption spectroscopy","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Jan Min\\'ar, Kate\\v{r}ina Hor\\'akov\\'a, Martin Vondr\\'a\\v{c}ek, Ond\\v{r}ej \\v{S}ipr, Peter Blaha, Saleem Ayaz Khan, Vladim\\'ir Ch\\'ab","submitted_at":"2019-02-17T11:47:12Z","abstract_excerpt":"The arrangement of B~atoms in a doped Si(111)-$(\\sqrt{3}\\times\\sqrt{3})R30^{\\circ}$:B system was studied using near-edge x-ray absorption fine structure (NEXAFS). Boron atoms were deposited via segregation from the bulk by flashing the sample repeatedly. The positions of B~atoms are determined by comparing measured polarized (angle-dependent) NEXAFS spectra with spectra calculated for various structural models based on ab-initio total energy calculations. It is found that most of boron atoms are located in sub-surface L$_{1}^{c}$ positions, beneath a Si atom. However, depending on the preparat"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1902.06244","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}