{"paper":{"title":"Intrinsic Electrical Transport and Performance Projections of Synthetic Monolayer MoS2 Devices","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mes-hall"],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Chris D. English, Eric Pop, Kirby K.H. Smithe, Saurabh V. Suryavanshi","submitted_at":"2016-08-02T20:10:59Z","abstract_excerpt":"We demonstrate monolayer MoS2 grown by chemical vapor deposition (CVD) with transport properties comparable to those of the best exfoliated devices over a wide range of carrier densities (up to ~10^13 1/cm^2) and temperatures (80-500 K). Transfer length measurements reveal monolayer mobility of ~20 cm2/V/s on SiO2 substrates at 300 K and practical carrier densities (>2x10^12 1/cm^2). We also demonstrate the highest current density reported to date (~270 uA/um or 44 MA/cm^2) at 300 K for an 80 nm device from CVD-grown monolayer MoS2. Using simulations, we discuss what improvements of monolayer "},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1608.00987","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}