{"paper":{"title":"Optical Response of Strained- and Unstrained-Silicon Cold-Electron Bolometers","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["physics.ins-det"],"primary_cat":"astro-ph.IM","authors_text":"C. J. Dunscombe, D. R. Leadley, D. V. Morozov, E. H. C. Parker, M. J. Prest, M. Myronov, M. Prunnila, P. A. R. Ade, P. D. Mauskopf, P. S. Barry, R. V. Sudiwala, T. E. Whall, T. L. R. Brien","submitted_at":"2016-03-10T15:58:35Z","abstract_excerpt":"We describe the optical characterisation of two silicon cold-electron bolometers each consisting of a small ($32 \\times 14~\\mathrm{\\mu m}$) island of degenerately doped silicon with superconducting aluminium contacts. Radiation is coupled into the silicon absorber with a twin-slot antenna designed to couple to 160-GHz radiation through a silicon lens.The first device has a highly doped silicon absorber, the second has a highly doped strained-silicon absorber.Using a novel method of cross-correlating the outputs from two parallel amplifiers, we measure noise-equivalent powers of $3.0 \\times 10^"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1603.03309","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}