{"paper":{"title":"Tuning the Fermi level through the Dirac point of giant Rashba semiconductor BiTeI with pressure","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"C. Martin, D. Graf, D. L. Maslov, D. VanGennep, H. Berger, J. J. Hamlin, S. Maiti, S. W. Tozer","submitted_at":"2014-04-28T14:35:37Z","abstract_excerpt":"We report measurements of Shubnikov-de Haas oscillations in the giant Rashba semiconductor BiTeI under applied pressures up to $\\sim 2\\,\\mathrm{GPa}$. We observe one high frequency oscillation at all pressures and one low frequency oscillation that emerges between $\\sim 0.3-0.7\\,\\mathrm{GPa}$ indicating the appearance of a second small Fermi surface. BiTeI has a conduction band bottom that is split into two sub-bands due to the strong Rashba coupling, resulting in a `Dirac point'. Our results suggest that the chemical potential starts below the Dirac point in the conduction band at ambient pre"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1404.7004","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}