{"paper":{"title":"Acceptor levels of the carbon vacancy in $4H$-SiC: combining Laplace deep level transient spectroscopy with density functional modeling","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Anthony R. Peaker, Ivana Capan, Jos\\'e Coutinho, Takeshi Ohshima, Tomislav Brodar, Vladimir P. Markevich","submitted_at":"2018-12-16T13:31:36Z","abstract_excerpt":"We provide direct evidence that the broad Z$_{1/2}$ peak, commonly observed by conventional DLTS in as-grown and at high concentrations in radiation damaged $4H$-SiC, has two components, namely Z$_{1}$ and Z$_{2}$, with activation energies for electron emission of 0.59 and 0.67~eV, respectively. We assign these components to $\\mathrm{Z}_{1/2}^{=}\\rightarrow\\mathrm{Z}_{1/2}^{-}+e^{-}\\rightarrow\\mathrm{Z}_{1/2}^{0}+2e^{-}$ transition sequences from negative-$U$ ordered acceptor levels of carbon vacancy (V$_{\\mathrm{C}}$) defects at hexagonal/pseudo-cubic sites, respectively. By employing short f"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1812.06462","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}