{"paper":{"title":"Epitaxy and Structural Properties of (V,Bi,Sb)$_2$Te$_3$ Layers Exhibiting the Quantum Anomalous Hall Effect","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"C. Gould, K. Brunner, K. M. Fijalkowski, L. W. Molenkamp, M. Winnerlein, S. Grauer, S. Rosenberger, S. Schreyeck","submitted_at":"2017-04-19T10:15:44Z","abstract_excerpt":"The influence of Sb content, substrate type and cap layers on the quantum anomalous Hall effect observed in V-doped (Bi,Sb)$_2$Te$_3$ magnetic topological insulators is investigated. Thin layers showing excellent quantization are reproducibly deposited by molecular beam epitaxy at growth conditions effecting a compromise between controlled layer properties and high crystalline quality. The Sb content can be reliably determined from the in-plane lattice constant measured by X-ray diffraction, even in thin layers. This is the main layer parameter to be optimized in order to approach charge neutr"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1704.05677","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}