{"paper":{"title":"Universal density scaling of disorder-limited low-temperature conductivity in high-mobility two-dimensional systems","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mtrl-sci"],"primary_cat":"cond-mat.mes-hall","authors_text":"E. H. Hwang, S. Das Sarma","submitted_at":"2013-04-17T02:09:39Z","abstract_excerpt":"We theoretically consider the carrier density dependence of low-temperature electrical conductivity in high-quality and low-disorder two-dimensional (2D) `metallic' electronic systems such as 2D GaAs electron or hole quantum wells or gated graphene. Taking into account resistive scattering by Coulomb disorder arising from quenched random charged impurities in the environment, we show that the 2D conductivity \\sigma(n) varies as \\sigma ~ n^{\\beta(n)} as a function of the 2D carrier density n where the exponent \\beta(n) is a smooth, but non-monotonic, function of density with possible nontrivial"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1304.4668","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}