{"paper":{"title":"Electronic Structure of Fe$_{1.08}$Te bulk crystals and epitaxial FeTe thin films on Bi$_2$Te$_3$","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.str-el","authors_text":"Fabian Arnold, Jan Fik\\'a\\u{c}ek, Jan Honolka, Jens Wiebe, Jill Miwa, Jin Hu, Jonas Warmuth, Marco Bianchi, Martin Bremholm, Matteo Michiardi, Philip Hofmann, Roland Wiesendanger, Tim Wehling, Udai Raj Singh, Zhiqiang Mao","submitted_at":"2017-11-19T16:08:23Z","abstract_excerpt":"The electronic structure of thin films of FeTe grown on Bi$_2$Te$_3$ is investigated using angle-resolved photoemission spectroscopy, scanning tunneling microscopy and first principles calculations. As a comparison, data from cleaved bulk \\FeTe taken under the same experimental conditions is also presented. Due to the substrate and thin film symmetry, FeTe thin films grow on Bi$_2$Te$_3$ in three domains, rotated by 0$^{\\circ}$, 120$^{\\circ}$, and 240$^{\\circ}$. This results in a superposition of photoemission intensity from the domains, complicating the analysis. However, by combining bulk an"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1711.07039","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}