{"paper":{"title":"Shape evolution of MBE grown Si$_{1-x}$Ge$_{x}$ structures on high index Si(5 5 12) surfaces: A temperature dependent study","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mes-hall"],"primary_cat":"cond-mat.mtrl-sci","authors_text":"A. Rath, J. K. Dash, P. V. Satyam, R. R. Juluri","submitted_at":"2012-05-28T07:06:04Z","abstract_excerpt":"The morphological evolution and the effect of growth temperature on size, orientation and composition of molecular beam epitaxy grown Ge-Si islands on Si(5 5 12) surfaces have been investigated in the temperature range from room temperature (RT) to 800$^\\circ$C. Two modes of substrate heating i.e. radiative heating (RH) and direct current heating (DH) have been used. The post-growth characterization was carried out ex situ by scanning electron microscopy (SEM), cross-sectional transmission electron microscopy (X-TEM) and Rutherford backscattering spectrometry (RBS). In the RH case, we found sp"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1205.6039","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}