{"paper":{"title":"Photoinduced tunability of the Reststrahlen band in 4H-SiC","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mes-hall","physics.optics"],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Adam D. Dunkelberger, Alexander J. Giles, Bryan T. Spann, Daniel Ratchford, James P. Long, Jeffrey C. Owrutsky, Joshua D. Caldwell, Paul B. Klein, Ryan Compton","submitted_at":"2015-11-30T18:52:36Z","abstract_excerpt":"Materials with a negative dielectric permittivity (e.g. metals) display high reflectance and can be shaped into nanoscale optical-resonators exhibiting extreme mode confinement, a central theme of nanophotonics. However, the ability to $actively$ tune these effects remains elusive. By photoexciting free carriers in 4H-SiC, we induce dramatic changes in reflectance near the \"Reststrahlen band\" where the permittivity is negative due to charge oscillations of the polar optical phonons in the mid-infrared. We infer carrier-induced changes in the permittivity required for useful tunability (~ 40 cm"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1511.09428","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}