{"paper":{"title":"Colossal Magnetoresistance in the Mn2+ Oxypnictides NdMnAsO1-xFx","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mtrl-sci","cond-mat.supr-con"],"primary_cat":"cond-mat.str-el","authors_text":"A. C. McLaughlin, E. J. Wildman, J. M. S. Skakle, N. Emery","submitted_at":"2012-07-04T12:39:07Z","abstract_excerpt":"Colossal magnetoresistance (CMR) is a rare phenomenon in which the electronic resistivity of a material can be decreased by orders of magnitude upon application of a magnetic field. Such an effect could be the basis of the next generation of magnetic memory devices. Here we report CMR in the antiferromagnetic oxypnictide NdMnAsO1-xFx as a result of competition between an antiferromagnetic insulating phase with strong electron correlations and a paramagnetic semiconductor upon application of a magnetic field. The discovery of CMR in antiferromagnetic Mn2+ oxypnictide materials could open up an "},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1207.0958","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}