{"paper":{"title":"Noncontact dielectric constant metrology of low-k interconnect films using a near-field scanned microwave probe","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["physics.ins-det"],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Andr\\'e Scherz, Andrew R. Schwartz, Robert L. Moreland, Vladimir V. Talanov","submitted_at":"2011-08-10T16:41:32Z","abstract_excerpt":"We present a method for noncontact, noninvasive measurements of dielectric constant, k, of 100-nm- to 1.5-\\mu m-thick blanket low-k interconnect films on up to 300 mm in diameter wafers. The method has about 10 micron sampling spot size, and provides <0.3% precision and <2% accuracy for k-value. It is based on a microfabricated near-field scanned microwave probe formed by a 4 GHz parallel strip transmission line resonator tapered down to a few-micron tip size."},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1108.2218","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}