{"paper":{"title":"Characterizing, Exploiting, and Mitigating Vulnerabilities in MLC NAND Flash Memory Programming","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cs.AR","authors_text":"Erich F. Haratsch, Ken Mai, Onur Mutlu, Saugata Ghose, Yixin Luo, Yu Cai","submitted_at":"2018-05-08T21:10:30Z","abstract_excerpt":"This paper summarizes our work on experimentally analyzing, exploiting, and addressing vulnerabilities in multi-level cell NAND flash memory programming, which was published in the industrial session of HPCA 2017, and examines the work's significance and future potential. Modern NAND flash memory chips use multi-level cells (MLC), which store two bits of data in each cell, to improve chip density. As MLC NAND flash memory scaled down to smaller manufacturing process technologies, manufacturers adopted a two-step programming method to improve reliability. In two-step programming, the two bits o"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1805.03291","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}