{"paper":{"title":"Anomalous Mn depth profiles for GaMnAs/GaAs(001) thin films grown by molecular beam epitaxy","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mtrl-sci"],"primary_cat":"cond-mat.mes-hall","authors_text":"C. Awo-Affouda, F. Ramos, J.F. Xu, P.M. Thibado, V.P. LaBella","submitted_at":"2015-02-24T17:04:38Z","abstract_excerpt":"Mn concentration depth profiles in Mn-doped GaAs thin films grown at substrate temperatures of 580 and 250 {\\deg}C using various Mn cell temperatures have been investigated with dynamic secondary ion mass spectrometry and Auger electron spectroscopy. When the samples are grown at a low substrate temperature of 250 {\\deg}C, the Mn distributes uniformly. For the samples grown at a high substrate temperature of 580 {\\deg}C, the concentration depth profiles are easily fitted with a temperature-dependent Fermi function only if the Mn concentration is above the solubility limit. However, when the Mn"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1502.06879","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}