{"paper":{"title":"Designing 3D topological insulators by 2D-Xene (X = Ge, Sn) sheet functionalization in the GaGeTe-type structures","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Alexander Zeugner, Alexey I. Baranov, Anna Isaeva, Arno Pfitzner, Eugeni V. Chulkov, Florian Pielnhofer, Igor P. Rusinov, Irina Yu. Sklyadneva, Klaus-Peter Bohnen, Michael Ruckd, Pavlo Golub, Rolf Heid, Tatiana V. Menshchikova","submitted_at":"2017-04-24T13:48:44Z","abstract_excerpt":"State-of-the-art theoretical studies anticipate a 2D Dirac system in the \"heavy\" analogues of graphene, free-standing buckled honeycomb-like Xenes (X = Si, Ge, Sn, Pb, etc.). Herewith a structurally and electronically resembling 2D sheet, which can be regarded as Xene functionalized by covalent interactions within a 3D periodic structure, is predicted to constitute a 3D strong topological insulator with Z2 = 1;(111) (primitive cell, rhombohedral setting) in the structural family of layered AXTe (A = Ga, In; X = Ge, Sn) bulk materials. The host structure GaGeTe is a long-known bulk semiconducto"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1704.07227","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}