{"paper":{"title":"Stable Operation of AlGaN/GaN HEMTs at 400$^\\circ$C in air for 25 hours","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"physics.app-ph","authors_text":"Ananth Saran Yalamarthy, Caitlin Chapin, Debbie G. Senesky, Peter F. Satterthwaite, Saleh Kargarrazi, Scott William Blankenberg","submitted_at":"2019-03-01T23:12:58Z","abstract_excerpt":"In this letter, we report the operation of AlGaN/GaN HEMTs with Pd gates in air over a wide temperature range from 22$^\\circ$C to 500$^\\circ$C. The variation in the threshold voltage ($V_{th}$) is less than 1$\\%$ over the entire temperature range. Moreover, a safe biasing region where the transconductance peak ($g_m$) occurs over the entire temperature range was observed, enabling high-temperature analog circuit design. Furthermore, the operation of the devices over 25 hours was experimentally studied, demonstrating the stability of the DC characteristics and $V_{th}$ at 400$^\\circ$C. Finally,"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1903.00572","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}