{"paper":{"title":"Surface-Roughness-Limited Mean Free Path in Si Nanowire FETs","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"Hyo-Eun Jung, Mincheol Shin","submitted_at":"2013-04-20T07:30:58Z","abstract_excerpt":"The mean free path (MFP) in silicon nanowire field effect transistors limited by surface roughness scattering (SRS) is calculated with the non-perturbative approach utilizing the non-equilibrium Green's function method. The entrance scattering effect associated with finiteness of the channel length is identified and a method to eliminate it in the calculation of the MFP is developed. The behavior of the MFP with respect to channel length (L), channel width (W), and the root-mean-square (RMS) of the surface roughness is investigated extensively. Our major findings are that the single parameter,"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1304.5597","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}