{"paper":{"title":"Stress engineering with silicon nitride stressors for Ge-on-Si lasers","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"physics.optics","authors_text":"Guangrui Xia, Jiaxin Ke, Lukas Chrostowski","submitted_at":"2016-10-25T10:08:48Z","abstract_excerpt":"Side and top silicon nitride stressors were proposed and shown to be effective ways to reduce the threshold current Ith and improve the wall-plug efficiency {\\eta}wp of Ge-on-Si lasers. Side stressors only turned out to be a more efficient way to increase {\\eta}wp than using top and side stressors together. With the side stressors only and geometry optimizations, a {\\eta}wp of 30.5% and an Ith of 50 mA (Jth of 37 kA/cm2) can be achieved with the defect limited carrier lifetime of 1 nsec. With the defect limited carrier lifetime of 10 nsec, an Ith of 7.8 mA (Jth of 5.8 kA/cm2) and a wall-plug e"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1610.07813","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}