{"paper":{"title":"A wet etching method for few-layer black phosphorus with an atomic accuracy and compatibility with major lithography techniques","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Guangrui (Maggie) Xia, Karen Kavanagh, Tao Fang, Teren Liu","submitted_at":"2019-01-07T07:06:13Z","abstract_excerpt":"This paper reports a few-layer black phosphorus thickness pattern fabricated by a top-down nanofabrication approach. This was achieved by a new wet etching process that can etch selected regions of few-layer black phosphorus with an atomic layer accuracy. This method is deep-UV and e-beam lithography process compatible,and is free of oxygen and other common doping sources. It provides a feasible patterning approach for largescale manufacturing of few-layer BP materials and devices."},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1901.01682","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}