{"paper":{"title":"Vacancy defect in bulk and at (10$\\overline{1}$0) surface of GaN: A combined first-principles theoretical and experimental analysis","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Manish Jain, Mit H. Naik, Sanjay Nayak, S.M. Shivaprasad, U.V. Waghmare","submitted_at":"2017-10-16T13:01:01Z","abstract_excerpt":"We determine atomic and electronic structure, formation energy, stability and magnetic properties of native point defects, such as Gallium (Ga) and Nitrogen (N) vacancies in bulk and at non-polar (10$\\overline{1}$0) surface of wurtzite Gallium Nitride (\\textit w-GaN) using, first-principles calculations based on Density Functional Theory (DFT). Under both Ga-rich and N-rich conditions, formation energy of N-vacancies is significantly lower than that of Ga-vacancies in bulk and at (10$\\overline{1}$0) surface. Experimental evidence of the presence of N-vacancies was noted from electron energy lo"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1710.05670","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}