{"paper":{"title":"First-Principles Study for Evidence of Low Interface Defect Density at Ge/GeO$_2$ Interfaces","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.other"],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Heiji Watanabe, Shoichiro Saito, Takuji Hosoi, Tomoya Ono","submitted_at":"2009-04-16T12:06:57Z","abstract_excerpt":"We present the evidence of the low defect density at Ge/GeO$_2$ interfaces in terms of first-principles total energy calculations. The energy advantages of the atom emission from the Ge/GeO$_2$ interface to release the stress due to the lattice mismatch are compared with those from the Si/SiO$_2$ interface. The energy advantages of the Ge/GeO$_2$ are found to be smaller than those of the Si/SiO$_2$ because of the high flexibility of the bonding networks in GeO$_2$. Thus, the suppression of the Ge-atom emission during the oxidation process leads to the improved electrical properties of the Ge/G"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"0904.2474","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}