{"paper":{"title":"Controlling electron-phonon interactions in graphene at ultra high carrier densities","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mtrl-sci"],"primary_cat":"cond-mat.mes-hall","authors_text":"Dmitri K. Efetov, Philip Kim","submitted_at":"2010-09-15T18:35:04Z","abstract_excerpt":"We report on the temperature dependent electron transport in graphene at different carrier densities $n$. Employing an electrolytic gate, we demonstrate that $n$ can be adjusted up to 4$\\times10^{14}$cm$^{-2}$ for both electrons and holes. The measured sample resistivity $\\rho$ increases linearly with temperature $T$ in the high temperature limit, indicating that a quasi-classical phonon distribution is responsible for the electron scattering. As $T$ decreases, the resistivity decreases more rapidly following $\\rho (T) \\sim T^{4}$. This low temperature behavior can be described by a Bloch-Gr\\\""},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1009.2988","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}