{"paper":{"title":"Read Disturb Errors in MLC NAND Flash Memory","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cs.AR","authors_text":"Erich F. Haratsch, Ken Mai, Onur Mutlu, Saugata Ghose, Yixin Luo, Yu Cai","submitted_at":"2018-05-08T21:00:24Z","abstract_excerpt":"This paper summarizes our work on experimentally characterizing, mitigating, and recovering read disturb errors in multi-level cell (MLC) NAND flash memory, which was published in DSN 2015, and examines the work's significance and future potential. NAND flash memory reliability continues to degrade as the memory is scaled down and more bits are programmed per cell. A key contributor to this reduced reliability is read disturb, where a read to one row of cells impacts the threshold voltages of unread flash cells in different rows of the same block.\n  For the first time in open literature, this "},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1805.03283","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}