{"paper":{"title":"Chemical Vapor Deposition-Assembled Graphene Field-Effect Transistor on Hexagonal Boron Nitride","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Bin Yu, Edwin Kim, Eui Sang Song, Tianhua Yu","submitted_at":"2011-05-08T01:05:30Z","abstract_excerpt":"We investigate key electrical properties of monolayer graphene assembled by chemical-vapor-deposition (CVD) as impacted by supporting substrate material. Graphene field-effect transistors (GFETs) were fabricated with carbon channel placing directly on hexagonal boron nitride (h-BN) and SiO2, respectively. Small-signal transconductance (gm) and effective carrier mobility ({\\mu}eff) are improved by 8.5 and 4 times on h-BN, respectively, as compared with that on SiO2. Compared with GFET with exfoliated graphene on SiO2, gm and {\\mu}eff measured from device with CVD graphene on h-BN substrate exhi"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1105.1485","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}