{"paper":{"title":"Negative Differential Resistance and Ultra-High TMR in Altermagnetic Tunnel Junctions","license":"http://creativecommons.org/licenses/by/4.0/","headline":"Altermagnetic tunnel junctions with KV2Se2O produce large low-bias negative differential resistance and sign-inverting TMR.","cross_cats":["cond-mat.mtrl-sci"],"primary_cat":"cond-mat.mes-hall","authors_text":"Declan Nell, Luke Keenan, Sajjan Sheoran, Stefano Sanvito","submitted_at":"2026-05-12T20:19:35Z","abstract_excerpt":"Altermagnets can replace ferromagnets in tunnel junctions, yielding large tunneling magnetoresistance, ultrafast switching, and low-power functionality. While most studies explore the linear-response regime, interesting features emerge at finite bias, where the peculiar electronic structure of altermagnets gives rise to complex non-linear behaviour. Using non-equilibrium Green's functions implemented with density functional theory, we predict that a large low-bias negative differential resistance can be observed in an altermagnetic tunnel junction. Our proposed junction incorporates the orbita"},"claims":{"count":4,"items":[{"kind":"strongest_claim","text":"We predict that a large low-bias negative differential resistance can be observed in an altermagnetic tunnel junction... supports a large tunneling magnetoresistance with sign inversion at 0.13 V.","source":"verdict.strongest_claim","status":"machine_extracted","claim_id":"C1","attestation":"unclaimed"},{"kind":"weakest_assumption","text":"The quasi-2D Fermi surface of KV2Se2O plays a crucial role in realizing the negative differential resistance, and the DFT+NEGF model accurately captures the bias-dependent transport without significant errors from functional choice or interface details.","source":"verdict.weakest_assumption","status":"machine_extracted","claim_id":"C2","attestation":"unclaimed"},{"kind":"one_line_summary","text":"Altermagnetic tunnel junctions based on KV2Se2O exhibit low-bias negative differential resistance and sign-inverting ultra-high TMR due to the material's quasi-2D Fermi surface.","source":"verdict.one_line_summary","status":"machine_extracted","claim_id":"C3","attestation":"unclaimed"},{"kind":"headline","text":"Altermagnetic tunnel junctions with KV2Se2O produce large low-bias negative differential resistance and sign-inverting TMR.","source":"verdict.pith_extraction.headline","status":"machine_extracted","claim_id":"C4","attestation":"unclaimed"}],"snapshot_sha256":"7c282f02784f83ace06f47433dbe7eda6c003a714d4fe4fa1348d3f3cbb78500"},"source":{"id":"2605.12711","kind":"arxiv","version":1},"verdict":{"id":"a4503a3b-4c13-4758-aaf1-2dccabd82b51","model_set":{"reader":"grok-4.3"},"created_at":"2026-05-14T19:55:36.620014Z","strongest_claim":"We predict that a large low-bias negative differential resistance can be observed in an altermagnetic tunnel junction... supports a large tunneling magnetoresistance with sign inversion at 0.13 V.","one_line_summary":"Altermagnetic tunnel junctions based on KV2Se2O exhibit low-bias negative differential resistance and sign-inverting ultra-high TMR due to the material's quasi-2D Fermi surface.","pipeline_version":"pith-pipeline@v0.9.0","weakest_assumption":"The quasi-2D Fermi surface of KV2Se2O plays a crucial role in realizing the negative differential resistance, and the DFT+NEGF model accurately captures the bias-dependent transport without significant errors from functional choice or interface details.","pith_extraction_headline":"Altermagnetic tunnel junctions with KV2Se2O produce large low-bias negative differential resistance and sign-inverting TMR."},"references":{"count":14,"sample":[{"doi":"","year":2021,"title":"(1) Šmejkal, L.; Sinova, J.; Jungwirth, T.Phys. Rev. X2022,12, 031042. (2) Yuan, L.-D.; Wang, Z.; Luo, J.-W.; Zunger, A.Phys. Rev. Mater.2021,5, 014409. (3) Hayami, S.; Yanagi, Y.; Kusunose, H.Phys. R","work_id":"c95faf01-1367-41df-8002-dd82ccf8ab7e","ref_index":1,"cited_arxiv_id":"","is_internal_anchor":false},{"doi":"","year":2021,"title":"(5) Sheoran, S.; Dev, P.Phys. Rev. B2025,111, 184407. (6) González-Hernández, R.; Šmejkal, L.; V` yborn` y, K.; Yahagi, Y.; Sinova, J.; Jungwirth, T.; Železn` y, J. Phys. Rev. Lett.2021,126, 127701. (","work_id":"66353d75-369d-4c81-b734-fcd5bde15c6a","ref_index":2,"cited_arxiv_id":"","is_internal_anchor":false},{"doi":"","year":2025,"title":"(11) Zhang, X.-P.; Feng, W.; Zhang, R.-W.; Fan, X.; Wang, X.; Yao, Y.Phys. Rev. Lett.2025,135, 266706. (12) Xu, S.; Zhang, Z.; Mahfouzi, F.; Huang, Y.; Cheng, H.; Dai, B.; Kim, J.; Zhu, D.; Cai, W.; S","work_id":"a9dd5512-31a1-4579-ad3b-f140f587fc69","ref_index":3,"cited_arxiv_id":"","is_internal_anchor":false},{"doi":"","year":2025,"title":"(13) Noh, S.; Kim, G.-H.; Lee, J.; Jung, H.; Seo, U.; So, G.; Lee, J.; Lee, S.; Park, M.; Yang, S., et al.Phys. Rev. Lett.2025,134, 246703. (14) Halder, A.; Nell, D.; Sihi, A.; Bajaj, A.; Sanvito, S.;","work_id":"4091ede6-8fc7-4f09-a547-d9b94f4b7323","ref_index":4,"cited_arxiv_id":"","is_internal_anchor":false},{"doi":"","year":2012,"title":"M.; Archer, T.; Rungger, I.; Sanvito, S.Phys","work_id":"8245daae-9293-4fb5-94ed-0baa771a2d57","ref_index":5,"cited_arxiv_id":"","is_internal_anchor":false}],"resolved_work":14,"snapshot_sha256":"b870d4bbf2f22dc505a28ca223f4742837251ff2bab61989fbdea82938d15b74","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}