{"paper":{"title":"Probing spin relaxation in an individual InGaAs quantum dot using a single electron optical spin memory device","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"D. Heiss, D. Rudolph, F. Klotz, G. Abstreiter, J. J. Finley, M. Bichler, M. S. Brandt, V. Jovanov","submitted_at":"2010-09-01T15:43:02Z","abstract_excerpt":"We demonstrate all optical electron spin initialization, storage and readout in a single self-assembled InGaAs quantum dot. Using a single dot charge storage device we monitor the relaxation of a single electron over long timescales exceeding 40{\\mu}s. The selective generation of a single electron in the quantum dot is performed by resonant optical excitation and subsequent partial exciton ionization; the hole is removed from the quantum dot whilst the electron remains stored. When subject to a magnetic field applied in Faraday geometry, we show how the spin of the electron can be prepared wit"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1009.0207","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}