{"paper":{"title":"Narrow-linewidth homogeneous optical emitters in diamond nanostructures via silicon ion implantation","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["quant-ph"],"primary_cat":"cond-mat.mes-hall","authors_text":"Alexander S. Zibrov, Alp Sipahigil, Denis D. Sukachev, Mikhail D. Lukin, Ruffin E. Evans","submitted_at":"2015-12-11T21:00:07Z","abstract_excerpt":"The negatively-charged silicon-vacancy ($\\mathrm{SiV}^{-}$) center in diamond is a bright source of indistinguishable single photons and a useful resource in quantum information protocols. Until now, $\\mathrm{SiV}^{-}$ centers with narrow optical linewidths and small inhomogeneous distributions of $\\mathrm{SiV}^{-}$ transition frequencies have only been reported in samples doped with silicon during diamond growth. We present a technique for producing implanted $\\mathrm{SiV}^{-}$ centers with nearly lifetime-limited optical linewidths and a small inhomogeneous distribution. These properties per"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1512.03820","kind":"arxiv","version":3},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}