{"paper":{"title":"Non-saturating magnetoresistance in heavily disordered semiconductors","license":"","headline":"","cross_cats":[],"primary_cat":"cond-mat","authors_text":"M. M. Parish, P. B. Littlewood","submitted_at":"2003-12-01T04:11:25Z","abstract_excerpt":"The resistance of a homogeneous semiconductor increases quadratically with magnetic field at low fields and, except in very special cases, saturates at fields much larger than the inverse of the carrier mobility, a number typically of order 1 Tesla. Here, we argue that a macroscopically disordered and strongly inhomogeneous semiconductor will instead show a non-saturating magnetoresistance, with typically a quasi-linear behaviour up to very large fields, and possibly also extending down to very low fields, depending on the degree of inhomogeneity. We offer this as a possible explanation of the"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"cond-mat/0312020","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"integrity":{"clean":true,"summary":{"advisory":0,"critical":0,"by_detector":{},"informational":0},"endpoint":"/pith/cond-mat/0312020/integrity.json","findings":[],"available":true,"detectors_run":[],"snapshot_sha256":"c28c3603d3b5d939e8dc4c7e95fa8dfce3d595e45f758748cecf8e644a296938"},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}