{"paper":{"title":"Impact ionization fronts in Si diodes: Numerical evidence of superfast propagation due to nonlocalized preionization","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Andrey Minarsky, Igor Grekhov, Pavel Rodin","submitted_at":"2010-01-24T17:51:53Z","abstract_excerpt":"We present numerical evidence of a novel propagation mode for superfast impact ionization fronts in high-voltage Si $p^+$-$n$-$n^+$ structures. In nonlinear dynamics terms, this mode corresponds to a pulled front propagating into an unstable state in the regime of nonlocalized initial conditions. Before the front starts to travel, field-ehanced emission of electrons from deep-level impurities preionizes initially depleted $n$ base creating spatially nonuniform free carriers profile. Impact ionization takes place in the whole high-field region. We find two ionizing fronts that propagate in oppo"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1001.4264","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}